OXIDATION OF AN INSB LAYER AFTER ION-IMPLANTATION

被引：3

作者：

MARTIN, P ^{[1
]}

LIGEON, E ^{[1
]}

GAILLIARD, JP ^{[1
]}

机构：

[1] CEN,DEPT MET GRENOBLE PHS,F-38041 GRENOBLE,FRANCE

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1982年 / 197卷 / 01期

关键词：

D O I：

10.1016/0167-5087(82)90116-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：47 / 49

页数：3

共 8 条

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BAHIR, G ;

KALISH, R .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (04) :199-203

[2] VERY EFFICIENT VOID FORMATION IN ION-IMPLANTED INSB [J].

DESTEFANIS, GL ;

GAILLIARD, JP .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :40-42

[3] MOLECULAR EFFECT IN THE EXPANSION OF ION-IMPLANTED INSB [J].

DESTEFANIS, GL ;

BELLE, JP ;

OGIERCOLLIN, JM ;

GAILLIARD, JP .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :637-639

[4]

GAILLIARD JP, UNPUB RAD EFFECTS

[5]

LANGGUTH G, 1971, ION IMPLANTATION SEM, P228

[6]

MITCHELL IV, 1972, AECL4259 PROGR REP

[7] PHASE-COMPOSITION OF THIN OXIDE-FILMS ON INSB [J].

SMIRNOVA, TP ;

GOLUBENKO, AN ;

ZACHARCHUK, NF ;

BELYI, VI ;

KOKOVIN, GA ;

VALISHEVA, NA .

THIN SOLID FILMS, 1981, 76 (01) :11-21

[8]

Ziegler J. F., 1974, Atomic Data and Nuclear Data Tables, V13, P463, DOI 10.1016/0092-640X(74)90009-6

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