AC FIELD AND FREQUENCY-DEPENDENCE OF A-SI-H CONDUCTIVITY AT 4,2-K

被引：9

作者：

PISTOULET, B

ROCHE, F

CAGNA, A

机构：

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期

关键词：

D O I：

10.1051/jphyscol:1981429

中图分类号：

学科分类号：

摘要：

引用

页码：147 / 150

页数：4

共 12 条

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[8] CONDUCTION MECHANISMS IN AMORPHOUS AND DISORDERED SEMICONDUCTORS EXPLAINED BY A MODEL OF MEDIUM-RANGE DISORDER OF COMPOSITION [J].

PISTOULET, B ;

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[9] LOW-FREQUENCY CONDUCTIVITY DUE TO HOPPING PROCESSES IN SILICON [J].

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[10]

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