EFFECTS OF MAGNETIC-FIELD AND MICROWAVE-POWER ON ELECTRON-CYCLOTRON RESONANCE-TYPE PLASMA CHARACTERISTICS

被引:48
作者
POPOV, OA
机构
[1] Microscience, Inc., Norwell, Massachusetts
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1991年 / 9卷 / 03期
关键词
D O I
10.1116/1.577349
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Microwave plasmas were excited in cylindrical cavities of 2.5-5.0 cm diam in the presence of magnetic field of 800-1000 G. Microwave cw power of 100-1000 W at a frequency of 2.45 GHz was delivered in the plasma via a matched introduction (quartz) window. It was found that microwaves could propagate in cavities with diameters smaller than cutoff through the overdense plasma (N(e) > N(cr),N(cut-off)) if the magnetic field in the plasma is higher than electron cyclotron resonance (ECR) field. When the magnetic field is lower than 875 G no detectable microwave propagation through the overdense plasma was observed. The microwave power absorption was located mainly in two sites: (i) near the vacuum window (2-3 cm) where the microwave electric field seems to have a maximum amplitude and plasma density has a steep gradient with a magnitude of N(e) almost-equal-to N(cr) (Landau damping), and (ii) at sites along the plasma chamber where the magnetic field has a value of 875 G (ECR heating). Two electron temperatures on the Langmuir probe I-V characteristics - T(e1) = 3-6 eV, and T(e2) = 7-12 eV, and effects of magnetic field and plasma density on the microwave propagation are discussed.
引用
收藏
页码:711 / 716
页数:6
相关论文
共 24 条
[1]   ELECTRON-CYCLOTRON RESONANCE MICROWAVE DISCHARGES FOR ETCHING AND THIN-FILM DEPOSITION [J].
ASMUSSEN, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :883-893
[2]  
BLANCO JC, 1972, PHYS LETT A, V39, P368
[3]   OXIDATION OF SILICON IN AN ELECTRON-CYCLOTRON RESONANCE OXYGEN PLASMA - KINETICS, PHYSICOCHEMICAL, AND ELECTRICAL-PROPERTIES [J].
CARL, DA ;
HESS, DW ;
LIEBERMAN, MA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03) :2924-2930
[4]   AXIAL RADIO-FREQUENCY ELECTRIC-FIELD INTENSITY AND ION DENSITY DURING LOW TO HIGH MODE TRANSITION IN ARGON ELECTRON-CYCLOTRON RESONANCE DISCHARGES [J].
CARL, DA ;
WILLIAMSON, MC ;
LIEBERMAN, MA ;
LICHTENBERG, AJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02) :339-347
[5]  
CHEN FF, 1984, INTRO PLASMA PHYSICS
[6]   INVESTIGATION OF AN RF PLASMA WITH SYMMETRICAL AND ASYMMETRICAL ELECTROSTATIC PROBES [J].
GAGNE, RRJ ;
CANTIN, A .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) :2639-&
[7]  
Godyak V. A., 1977, Soviet Physics - Technical Physics, V22, P461
[8]   LINEAR TRANSFORMATION AND ABSORPTION OF WAVES IN A PLASMA [J].
GOLANT, VE ;
PILIYA, AD .
SOVIET PHYSICS USPEKHI-USSR, 1972, 14 (04) :413-&
[9]   BEHAVIOR OF AR PLASMAS FORMED IN A MIRROR FIELD ELECTRON-CYCLOTRON RESONANCE MICROWAVE ION-SOURCE [J].
GORBATKIN, SM ;
BERRY, LA ;
ROBERTO, JB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03) :2893-2899
[10]   INFLUENCE OF DEPOSITION CONDITIONS ON THE PROPERTIES OF SILICON-NITRIDE FILMS PREPARED BY THE ECR PLASMA CVD METHOD [J].
HIRAO, T ;
SETSUNE, K ;
KITAGAWA, M ;
KAMADA, T ;
WASA, K ;
IZUMI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (12) :2015-2021