共 24 条
[1]
ELECTRON-CYCLOTRON RESONANCE MICROWAVE DISCHARGES FOR ETCHING AND THIN-FILM DEPOSITION
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1989, 7 (03)
:883-893
[2]
BLANCO JC, 1972, PHYS LETT A, V39, P368
[3]
OXIDATION OF SILICON IN AN ELECTRON-CYCLOTRON RESONANCE OXYGEN PLASMA - KINETICS, PHYSICOCHEMICAL, AND ELECTRICAL-PROPERTIES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1990, 8 (03)
:2924-2930
[4]
AXIAL RADIO-FREQUENCY ELECTRIC-FIELD INTENSITY AND ION DENSITY DURING LOW TO HIGH MODE TRANSITION IN ARGON ELECTRON-CYCLOTRON RESONANCE DISCHARGES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1991, 9 (02)
:339-347
[5]
CHEN FF, 1984, INTRO PLASMA PHYSICS
[7]
Godyak V. A., 1977, Soviet Physics - Technical Physics, V22, P461
[8]
LINEAR TRANSFORMATION AND ABSORPTION OF WAVES IN A PLASMA
[J].
SOVIET PHYSICS USPEKHI-USSR,
1972, 14 (04)
:413-&
[9]
BEHAVIOR OF AR PLASMAS FORMED IN A MIRROR FIELD ELECTRON-CYCLOTRON RESONANCE MICROWAVE ION-SOURCE
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1990, 8 (03)
:2893-2899
[10]
INFLUENCE OF DEPOSITION CONDITIONS ON THE PROPERTIES OF SILICON-NITRIDE FILMS PREPARED BY THE ECR PLASMA CVD METHOD
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1987, 26 (12)
:2015-2021