ION-IMPLANTATION OF CARBON IN DIAMOND

被引：12

作者：

DERRY, TE

SELLSCHOP, JPF

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1981年 / 191卷 / 1-3期

关键词：

D O I：

10.1016/0029-554X(81)90976-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：23 / 26

页数：4

共 11 条

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[3] IMPLANTATION TEMPERATURE FOR III-V-COMPOUND SEMICONDUCTORS
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WILSON, JM
[J]. SURFACE SCIENCE, 1977, 65 (02) : 453 - 475
[6] Mayer JW., 1972, RADIAT EFF DEFECT S, V12, P183, DOI [10.1080/00337577208231141, DOI 10.1080/00337577208231141]
[7] NELSON RS, 1980, 2ND INT C ION BEAM M
[8] THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS
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[J]. PHYSICAL REVIEW, 1969, 184 (02): : 383 - +
[9] STRUCTURAL TRANSITIONS IN ION-IMPLANTED DIAMOND
VAVILOV, VS
KRASNOPEVTSEV, VV
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GORODETSKY, AE
ZAKHAROV, AP
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 22 (02): : 141 - 143
[10] SEMIEMPIRICAL METHOD OF APPLYING DECHANNELING CORRECTION IN EXTRACTION OF DISORDER DISTRIBUTION
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THOMPSON, DA
POEHLMAN, SW
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 34 (04): : 157 - 161