IMPLANTATION TEMPERATURE FOR III-V-COMPOUND SEMICONDUCTORS

被引：16

作者：

GAMO, K

TAKAI, M

YAGITA, H

TAKADA, N

MASUDA, K

NAMBA, S

MIZOBUCHI, A

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 03期

关键词：

D O I：

10.1116/1.569742

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1086 / 1088

页数：3

共 16 条

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[3] SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC [J].

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[4] REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS [J].

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[5] SELENIUM IMPLANTATION IN GAAS [J].

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WELCH, BM .

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[6]

GAMO K, 1973, J JPN SOC APPL PHYS, V42, P130

[7] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS [J].

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PASHLEY, RD .

APPLIED PHYSICS LETTERS, 1972, 21 (12) :601-&

[8]

HEMMENT PLF, 1975, ION IMPLANTATION SEM, P27

[9]

LANGGUTH G, 1971, ION IMPLANTATION SEM, P228

[10]

Mayer J. W., 1970, ION IMPLANTATION SEM

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