PROBING BY IN-SITU SCANNING-TUNNELING-MICROSCOPY THE INFLUENCE OF AN ORGANIC ADDITIVE ON SI ETCHING IN NAOH

被引：11

作者：

ALLONGUE, P

BERTAGNA, V

KIELING, V

GERISCHER, H

机构：

[1] LACOR,UFRGS,AV OSVALDO ARANHA 99,BR-90000 PORTO ALEGRE,RS,BRAZIL

[2] FRITZ HABER INST,D-14195 BERLIN,GERMANY

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 03期

关键词：

D O I：

10.1116/1.587281

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The etching of Si in alkaline solution is used to fabricate microstructures. A recent study has described the etching reaction at a molecular level. The present paper studies, with in situ scanning tunneling microscopy, the effect of a surfactant (triton) on Si etching and its consequences regarding the resulting surface topography, which is an important question in the preparation of substrates.

引用

页码：1539 / 1542

页数：4

共 26 条

[1] ETCHING OF SILICON IN NAOH SOLUTIONS .2. ELECTROCHEMICAL STUDIES OF N-SI(111) AND N-SI(100) AND MECHANISM OF THE DISSOLUTION [J].