HIGH-SPEED INP/INGAASP/INGAAS AVALANCHE PHOTODIODES GROWN BY CHEMICAL BEAM EPITAXY

被引：63

作者：

CAMPBELL, JC

TSANG, WT

QUA, GJ

JOHNSON, BC

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1988年 / 24卷 / 03期

关键词：

D O I：

10.1109/3.151

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：496 / 500

页数：5

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