APPLICATION OF COMMUNICATIONS THEORY TO ANALYZE CARRIER DENSITY MODULATION EFFECTS IN TRAVELING-WAVE SEMICONDUCTOR-LASER AMPLIFIERS

被引：8

作者：

HODGKINSON, TG

WEBB, RP

机构：

来源：

关键词：

D O I：

10.1049/el:19881058

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1550 / 1552

页数：3

共 8 条

[1] Adams M. J., 1985, IEE Proceedings J (Optoelectronics), V132, P58, DOI 10.1049/ip-j.1985.0012
[2] A COMPARISON OF ACTIVE AND PASSIVE OPTICAL BISTABILITY IN SEMICONDUCTORS
ADAMS, MJ
WESTLAKE, HJ
OMAHONY, MJ
HENNING, ID
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (09) : 1498 - 1504
[3] AMPLIFIER-INDUCED CROSSTALK IN MULTICHANNEL COHERENT LIGHTWAVE SYSTEMS
AGRAWAL, GP
[J]. ELECTRONICS LETTERS, 1987, 23 (22) : 1175 - 1177
[4] DARCIE E, 1988, ELECTRON LETT, V24, P638
[5] NEARLY DEGENERATE 4-WAVE-MIXING IN A TRAVELING-WAVE SEMICONDUCTOR-LASER AMPLIFIER
INOUE, K
MUKAI, T
SAITOH, T
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (14) : 1051 - 1053
[6] NONLINEAR MODELS OF TRAVELING-WAVE OPTICAL AMPLIFIERS
SALEH, AAM
[J]. ELECTRONICS LETTERS, 1988, 24 (14) : 835 - 837
[7] TAUB H, 1971, PRINCIPLES COMMUNICA, P118
[8] WILLIAMS RA, 1987, COMMUNICATION SYSTEM, P454