A COMPARISON OF ACTIVE AND PASSIVE OPTICAL BISTABILITY IN SEMICONDUCTORS

[1] Adams M. J., 1985, IEE Proceedings J (Optoelectronics), V132, P58, DOI 10.1049/ip-j.1985.0012

[2] OPTICAL BISTABILITY IN COUPLED-CAVITY SEMICONDUCTOR-LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (03) : 664 - 669

[3] DYNAMICS OF INJECTION LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1968, QE 4 (11) : 855 - +

[4] GIBBS HM, 1982, APPL PHYS LETT, V41, P221, DOI 10.1063/1.93490

[5] OPTICAL BISTABILITY IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (06) : 451 - 453

[6] BISTABILITY AND PULSATIONS IN CW SEMICONDUCTOR-LASERS WITH A CONTROLLED AMOUNT OF SATURABLE ABSORPTION [J]. APPLIED PHYSICS LETTERS, 1981, 39 (05) : 382 - 384

[7] BISTABLE OPERATION IN SEMICONDUCTOR-LASERS WITH INHOMOGENEOUS EXCITATION [J]. ELECTRONICS LETTERS, 1981, 17 (04) : 167 - 168

[8] OPTICAL INPUT AND OUTPUT CHARACTERISTICS FOR BISTABLE SEMICONDUCTOR-LASERS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (08) : 702 - 704

[9] TUNING CHARACTERISTICS OF OPTICAL AMPLIFICATION IN 1.5-MU-M INGAASP-INP LASERS [J]. ELECTRONICS LETTERS, 1983, 19 (08) : 295 - 297

[10] ANALYSIS OF A PROPOSED BISTABLE INJECTION LASER [J]. SOLID-STATE ELECTRONICS, 1964, 7 (10) : 707 - 716

[1] Adams M. J., 1985, IEE Proceedings J (Optoelectronics), V132, P58, DOI 10.1049/ip-j.1985.0012

[2] OPTICAL BISTABILITY IN COUPLED-CAVITY SEMICONDUCTOR-LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (03) : 664 - 669

[3] DYNAMICS OF INJECTION LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1968, QE 4 (11) : 855 - +

[4] GIBBS HM, 1982, APPL PHYS LETT, V41, P221, DOI 10.1063/1.93490

[5] OPTICAL BISTABILITY IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (06) : 451 - 453

[6] BISTABILITY AND PULSATIONS IN CW SEMICONDUCTOR-LASERS WITH A CONTROLLED AMOUNT OF SATURABLE ABSORPTION [J]. APPLIED PHYSICS LETTERS, 1981, 39 (05) : 382 - 384

[7] BISTABLE OPERATION IN SEMICONDUCTOR-LASERS WITH INHOMOGENEOUS EXCITATION [J]. ELECTRONICS LETTERS, 1981, 17 (04) : 167 - 168

[8] OPTICAL INPUT AND OUTPUT CHARACTERISTICS FOR BISTABLE SEMICONDUCTOR-LASERS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (08) : 702 - 704

[9] TUNING CHARACTERISTICS OF OPTICAL AMPLIFICATION IN 1.5-MU-M INGAASP-INP LASERS [J]. ELECTRONICS LETTERS, 1983, 19 (08) : 295 - 297

[10] ANALYSIS OF A PROPOSED BISTABLE INJECTION LASER [J]. SOLID-STATE ELECTRONICS, 1964, 7 (10) : 707 - 716