BISTABLE OPERATION IN SEMICONDUCTOR-LASERS WITH INHOMOGENEOUS EXCITATION

被引：85

作者：

KAWAGUCHI, H

IWANE, G

机构：

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 04期

关键词：

D O I：

10.1049/el:19810117

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bistable operation in InP/InGaAsP/InP DH lasers with a periodic excitation stripe geometry is reported. Bistability is observed wtihin a current range of about 10% of the threshold current for maximum value. The range depends on the stripe geometry and heat sink temperature, which are controllable.

引用

页码：167 / 168

页数：2

共 6 条

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[2] ROOM-TEMPERATURE CW OPERATION OF INP-INGAASP-INP DOUBLE HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.55 MU-M
KAWAGUCHI, H
TAKAHEI, K
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NAGAI, H
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[J]. ELECTRONICS LETTERS, 1979, 15 (21) : 669 - 670
[3] KAWAGUCHI H, UNPUBLISHED
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MARINACE, JC
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LASHER, GJ
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (02) : 473 - +
[6] ZAKHAROV YP, 1967, FIZ TVERD TELA+, V8, P1660

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