Magnetic depopulation of electronic subbands in low-dimensional semiconductor systems and their influence on the electrical resistivity and Hall effect

被引:50
作者
Berggren, KF [1 ]
Newson, DJ [1 ]
机构
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
关键词
D O I
10.1088/0268-1242/1/5/008
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In many modern semiconductor devices transport is no longer three-dimensional because electrical confinement may split up the density of states such that several two-dimensional (2D) or one-dimensional ( 1 D) sub-bands are occupied. A suitably orientated magnetic field causes depopulation ( emptying) of higher subbands. This occurs because the magnetic field has two effects; firstly it diamagnetically increases the energy levels and separations and secondly, it increases the density of states. Calculations of these effects have been made using the WKB method for MESFET/JFET type devices ( depopulation of 2D sub-bands) and for a model potential of a confined 2DEG ( depopulation of 1 D sub-bands). We outline the behaviour of the electrical resistance under such conditions and comment on the effect of such depopulation on the Hall effect ( including the quantum Hall effect) as 1 D sub-bands are depopulated.
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页码:327 / 337
页数:11
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