LASER SCANNING TECHNIQUE FOR THE DETECTION OF RESISTIVITY AND LIFETIME INHOMOGENEITIES IN SEMICONDUCTOR-DEVICES

被引：18

作者：

ENGSTROM, O ^{[1
]}

DRUGGE, B ^{[1
]}

TOVE, PA ^{[1
]}

机构：

[1] UNIV UPPSALA,INST TECHNOL,S-75105 UPPSALA,SWEDEN

来源：

PHYSICA SCRIPTA | 1978年 / 18卷 / 06期

关键词：

D O I：

10.1088/0031-8949/18/6/002

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：357 / 363

页数：7

共 16 条

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[3] DISTEFANO TH, 1974, IBM J RES DEV MAR, P94
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[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 1649 - &
[5] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
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[7] A FLYING-SPOT SCANNER
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