THE USE OF A MODULATED LIGHT SPOT IN SEMICONDUCTOR MEASUREMENTS

被引：9

作者：

AVERY, DG

GUNN, JB

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B | 1955年 / 68卷 / 11期

关键词：

D O I：

10.1088/0370-1301/68/11/315

中图分类号：

Q [生物科学];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：918 / 921

页数：4

共 4 条

ARTHUR, JB ;

BARDSLEY, W ;

GIBSON, AF ;

HOGARTH, CA .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (03) :121-129

[2] MEASUREMENT OF HOLE DIFFUSION IN N-TYPE GERMANIUM [J].

GOUCHER, FS .

PHYSICAL REVIEW, 1951, 81 (03) :475-475

[3] DRIFT MOBILITIES IN SEMICONDUCTORS .1. GERMANIUM [J].

PRINCE, MB .

PHYSICAL REVIEW, 1953, 92 (03) :681-687

[4] MEASUREMENT OF MINORITY CARRIER LIFETIME IN GERMANIUM [J].

VALDES, LB .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1420-1423