ON THE MEASUREMENT OF MINORITY CARRIER LIFETIME IN N-TYPE SILICON

[1] CARRIER EXTRACTION IN GERMANIUM [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (01): : 43 - 50

[2] THE REDUCTION OF RECTIFIER NOISE BY ILLUMINATION [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (408): : 1118 - 1119

[3] GRANVILLE JW, UNPUB

[4] THE DRIFT MOBILITY OF ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1952, 85 (04): : 680 - 680

[5] THE MOBILITY AND LIFE OF INJECTED HOLES AND ELECTRONS IN GERMANIUM [J]. PHYSICAL REVIEW, 1951, 81 (05): : 835 - 843

[6] HAYNES JR, 1954, PHYS REV, V94, P1437

[7] CURRENT MULTIPLICATION PROCESSES IN N-TYPE GERMANIUM POINT-CONTACT TRANSISTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1954, 67 (416): : 636 - 643

[8] A STUDY OF CARRIER INJECTING PROPERTIES OF EMITTER CONTACTS AND LIGHT SPOTS AT NORMAL AND MODERATELY ELEVATED TEMPERATURES [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (406): : 845 - 858

[9] ENHANCED ALPHA IN FORMED SILICON POINT CONTRACT TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1953, 24 (11) : 1410 - 1411

[10] THE TEMPERATURE DEPENDENCE OF THE DRIFT MOBILITY OF INJECTED HOLES IN GERMANIUM [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1954, 67 (409): : 18 - 27

[1] CARRIER EXTRACTION IN GERMANIUM [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (01): : 43 - 50

[2] THE REDUCTION OF RECTIFIER NOISE BY ILLUMINATION [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (408): : 1118 - 1119

[3] GRANVILLE JW, UNPUB

[4] THE DRIFT MOBILITY OF ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1952, 85 (04): : 680 - 680

[5] THE MOBILITY AND LIFE OF INJECTED HOLES AND ELECTRONS IN GERMANIUM [J]. PHYSICAL REVIEW, 1951, 81 (05): : 835 - 843

[6] HAYNES JR, 1954, PHYS REV, V94, P1437

[7] CURRENT MULTIPLICATION PROCESSES IN N-TYPE GERMANIUM POINT-CONTACT TRANSISTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1954, 67 (416): : 636 - 643

[8] A STUDY OF CARRIER INJECTING PROPERTIES OF EMITTER CONTACTS AND LIGHT SPOTS AT NORMAL AND MODERATELY ELEVATED TEMPERATURES [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (406): : 845 - 858

[9] ENHANCED ALPHA IN FORMED SILICON POINT CONTRACT TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1953, 24 (11) : 1410 - 1411

[10] THE TEMPERATURE DEPENDENCE OF THE DRIFT MOBILITY OF INJECTED HOLES IN GERMANIUM [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1954, 67 (409): : 18 - 27