INTRINSIC RESPONSE-TIME OF NORMALLY OFF MESFETS OF GAAS, SI, AND INP

被引：5

作者：

INO, M

OHMORI, M

机构：

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1980年 / 28卷 / 05期

关键词：

D O I：

10.1109/TMTT.1980.1130100

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：456 / 459

页数：4

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