EFFECTS OF HYDROGEN-ONLY INTERRUPTS ON INGAAS/INP SUPERLATTICES GROWN BY OMVPE

被引:22
作者
CLAWSON, AR [1 ]
VU, TT [1 ]
PAPPERT, SA [1 ]
HANSON, CM [1 ]
机构
[1] USN COMMAND,CTR CONTROL & OCEAN SURVEILLANCE,NRAD DIV,DIV ELECTR MAT SCI,SAN DIEGO,CA 92152
关键词
D O I
10.1016/0022-0248(92)90513-I
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Superlattices of InGaAs/InP have been grown by OMVPE using short interval H-2-only growth interrupts to eliminate intermixing of hydride gases at the heterojunction interfaces. Changes in lattice strain resulting from interlayer alloying were measured by X-ray diffraction. The changes in strain are small and consistent with decomposition of the surfaces when exposed to the nonequilibrium H-2 vapor. Possible interface smoothing is seen with H-2 interrupt at the InGaAs to InP transition. A large compressive strain contribution is unaffected by the interrupts and is attributed to As carryover into the InP from surrounding solid deposits rather than the transport gases.
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页码:536 / 540
页数:5
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