BEHAVIOR OF CONTINUOUSLY CHARGE-COUPLED RANDOM-ACCESS MEMORY (C3RAM)

被引：8

作者：

HOFFMANN, K ^{[1
]}

机构：

[1] SIEMENS AG,MUNICH,FED REP GER

来源：

关键词：

D O I：

10.1109/JSSC.1976.1050786

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：591 / 596

页数：6

共 9 条

[1]

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[2]

HELLER L, 1971, IBM TECHNICAL DI JUL, V14

[3]

HELLER LG, 1975, ISSCC DIG TECH P FEB, P112

[4]

HOFFMANN K, TO BE PUBLISHED

[5]

HOFFMANN K, 1976, ISSCC DIG TECH P FEB, P130

[6] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J].

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1365-1376

STEIN, KU ;

SIHLING, A ;

DOERING, E .

[8]

STRAIN RJ, 1971, BELL SYST TECH J, V50

[9] RESISTIVE MOS-GATED DIODE LIGHT SENSOR [J].

WHELAN, MV .