RESISTIVE MOS-GATED DIODE LIGHT SENSOR

[1] CHARGE-COUPLED DEVICES - NEW APPROACH TO MIS DEVICE STRUCTURES [J]. IEEE SPECTRUM, 1971, 8 (07) : 18 - &

[2] BRUGLER JS, 1969, T I ELECT ELECTRON E, VED16, P297

[3] CARSLAW HA, 1971, CONDUCTION HEAT SOLI

[4] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[5] Erdelyi A., 1954, TABLES INTEGRAL TRAN, V2

[6] Erdelyi A., 1954, TABLES INTEGRAL TRAN, VI

[7] DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1959, 116 (01): : 84 - 87

[8] GOSER K, 1970, ARCH ELEKTR UBERTRAG, V24, P21

[9] GRAY PE, 1969, ELECTRONIC PRINCIPLE, P340

[10] KABELL LJ, 1968, Patent No. 3391282

[1] CHARGE-COUPLED DEVICES - NEW APPROACH TO MIS DEVICE STRUCTURES [J]. IEEE SPECTRUM, 1971, 8 (07) : 18 - &

[2] BRUGLER JS, 1969, T I ELECT ELECTRON E, VED16, P297

[3] CARSLAW HA, 1971, CONDUCTION HEAT SOLI

[4] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[5] Erdelyi A., 1954, TABLES INTEGRAL TRAN, V2

[6] Erdelyi A., 1954, TABLES INTEGRAL TRAN, VI

[7] DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1959, 116 (01): : 84 - 87

[8] GOSER K, 1970, ARCH ELEKTR UBERTRAG, V24, P21

[9] GRAY PE, 1969, ELECTRONIC PRINCIPLE, P340

[10] KABELL LJ, 1968, Patent No. 3391282