HYDROGEN ETCHING OF SILICON CARBIDE

被引：39

作者：

KUMAGAWA, M

KUWABARA, H

YAMADA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1969年 / 8卷 / 04期

关键词：

D O I：

10.1143/JJAP.8.421

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：421 / &

共 15 条

[1] ETCHING OF ALPHA-SILICON CARBIDE [J].

BRANDER, RW ;

BOUGHEY, AL .

BRITISH JOURNAL OF APPLIED PHYSICS, 1967, 18 (07) :905-&

[2] CHEMICAL ETCHING OF SILICON CARBIDE WITH HYDROGEN [J].

CHU, TL ;

CAMPBELL, RB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (09) :955-&

[3] THERMODYNAMIC STUDY OF SIC UTILIZING A MASS SPECTROMETER [J].

DROWART, J ;

DEMARIA, G ;

INGHRAM, MG .

JOURNAL OF CHEMICAL PHYSICS, 1958, 29 (05) :1015-1021

[4]

DROWART J, 1960, SILICON CARBIDE HIGH, P16

[5]

Faust J. W., 1960, SILICON CARBIDE HIGH, P403

[6] OXIDATION OF SILICON CARBIDE AT 1150 DEGREES TO 1400 DEGREES C AND AT 9 X 10 TO 5 X 10-1 TORR OXYGEN PRESSURE [J].

GULBRANS.EA ;

ANDREW, KF ;

BRASSART, FA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) :1311-&

[7] REACTION OF HYDROGEN WITH GRAPHITE AT 1200 DEGREES TO 1650 DEGREES C [J].

GULBRANSEN, EA ;

ANDREW, KF ;

BRASSART, FA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (01) :49-+

[8] EPITAXIAL GROWTH OF SILICON CARBIDE [J].

JENNINGS, VJ ;

SOMMER, A ;

CHANG, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) :728-&

[9]

Kubaschewski O., 1958, METALLURGICAL THERMO

[10]

O'Connor John, 1960, SILICON CARBIDE, P16

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