MICROSTRAIN AND MACROSTRAIN PROFILES IN ZNSE EPITAXIAL LAYERS

被引：13

作者：

KROST, A

RICHTER, W

BRAFMAN, O

机构：

[1] TECHNION ISRAEL INST TECHNOL,DEPT PHYS,IL-32000 HAIFA,ISRAEL

[2] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 04期

关键词：

D O I：

10.1063/1.102803

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a microprobe Raman scattering study of the strain in a ZnSe heterostructure with GaAs, Ge, and Si. Measurements taken at adjacent sites of different distances from the interface prove Raman scattering to be a very powerful tool for detecting the strain and distinguishing between local high strains and macroscopic low strains.

引用

页码：343 / 345

页数：3

共 7 条

[1]

BRAFMAN O, 1971, LIGHT SCATTERING SOL, P284

[2] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS [J].