FIELD EFFECT ON MONOCRYSTALLINE TELLURIUM AT LOW TEMPERATURES

[1] *MODULATION DE LA CONDUCTANCE DUN SEMI-CONDUCTEUR PAR UN CHAMP ELECTRIQUE [J]. JOURNAL DE PHYSIQUE ET LE RADIUM, 1952, 13 (11): : 587 - 588

[2] VARIATION OF FIELD EFFECT MOBILITY AND HALL EFFECT MOBILITY WITH THE THICKNESS OF THE DEPOSITED FILMS OF TELLURIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 19 (1-2) : 61 - 65

[3] Goncharov A. D., 1969, Fizika i Tekhnika Poluprovodnikov, V3, P102

[4] MODULATION OF THE SURFACE CONDUCTANCE OF GERMANIUM BY PULSED ELECTRIC FIELDS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (12): : 1154 - 1157

[5] MANY A, 1966, SEMICONDUCTOR SURFAC

[6] THUILLIER JC, 1969, THESIS PARIS

[7] P-TYPE TELLURIUM THIN-FILM TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (05) : 608 - &

[1] *MODULATION DE LA CONDUCTANCE DUN SEMI-CONDUCTEUR PAR UN CHAMP ELECTRIQUE [J]. JOURNAL DE PHYSIQUE ET LE RADIUM, 1952, 13 (11): : 587 - 588

[2] VARIATION OF FIELD EFFECT MOBILITY AND HALL EFFECT MOBILITY WITH THE THICKNESS OF THE DEPOSITED FILMS OF TELLURIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 19 (1-2) : 61 - 65

[3] Goncharov A. D., 1969, Fizika i Tekhnika Poluprovodnikov, V3, P102

[4] MODULATION OF THE SURFACE CONDUCTANCE OF GERMANIUM BY PULSED ELECTRIC FIELDS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (12): : 1154 - 1157

[5] MANY A, 1966, SEMICONDUCTOR SURFAC

[6] THUILLIER JC, 1969, THESIS PARIS

[7] P-TYPE TELLURIUM THIN-FILM TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (05) : 608 - &