ELECTROOPTIC MODE-DISPLACEMENT SILICON LIGHT-MODULATOR

被引：16

作者：

PIRNAT, T ^{[1
]}

FRIEDMAN, L ^{[1
]}

SOREF, RA ^{[1
]}

机构：

[1] USAF,ROME LAB,ELECTROMAGNET & RELIABIL DIRECTORATE,BEDFORD,MA 01731

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 06期

关键词：

D O I：

10.1063/1.349271

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new type of guided-wave electro-optical intensity modulator is proposed and analyzed. The waveguide consists of an N-type Si core layer on a P-type Si substrate. Foward bias on the N+-N-P-P+ diode decreases the refractive index of the core and displaces the fundamental guided mode downward into the substrate. However, the mode is not extinguished because the substrate is bounded by a P+ contact. A spatial filter at the output converts the mode displacement into optical intensity modulation. A Poisson and continuity equation solver and multilayer waveguide simulation were used to obtain numerical estimates of mode displacement in a realistic structure.

引用

页码：3355 / 3359

页数：5