WAVEGUIDED ELECTROOPTICAL INTENSITY MODULATION IN A SI/GEXSI1-X/SI HETEROJUNCTION BIPOLAR-TRANSISTOR

被引：20

作者：

LAREAU, RD ^{[1
]}

FRIEDMAN, L ^{[1
]}

SOREF, RA ^{[1
]}

机构：

[1] USAF,ROME AIR DEV CTR,SOLID STATE SCI DIRECTORATE,BEDFORD,MA 01731

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 20期

关键词：

Optical modulation; Semiconductor devices and materials;

D O I：

10.1049/el:19901059

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical phase-and-amplitude modulation at 1.55μm in an electro-optic guided-wave Si/Ge0.2Si0.8/Si HBT is investigated using computer-aided modelling and simulation. At an injection of 1019 electrons per cm3, an intensity modulation of 10dB is predicted for an active length of 390μm. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1653 / 1655

页数：3

共 9 条

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