ELECTROOPTICAL EFFECTS IN SILICON

[1] HIGHLY EFFICIENT WAVE-GUIDE PHASE MODULATOR FOR INTEGRATED OPTOELECTRONICS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (19) : 1243 - 1245

[2] BALKANSKI M, 1965, AD619581

[3] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[4] GUTKIN AA, 1973, SOV PHYS SEMICOND+, V6, P1524

[5] GUTKIN AA, 1974, SOV PHYS SEMICOND+, V8, P781

[6] Moss T.S., 1973, SEMICONDUCTOR OPTO E

[7] REFRACTIVE INDICES OF GERMANIUM SILICON AND FUSED QUARTZ IN FAR INFRARED [J]. APPLIED OPTICS, 1967, 6 (11) : 1889 - +

[8] OPTICAL-ABSORPTION IN HEAVILY DOPED SILICON [J]. PHYSICAL REVIEW B, 1981, 23 (10) : 5531 - 5536

[9] COMPARISON OF CLASSICAL APPROXIMATIONS TO FREE CARRIER ABSORPTION IN SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (09) : 943 - &

[10] SCHUMANN PA, 1970, IBM TR221008 TECH RE

[1] HIGHLY EFFICIENT WAVE-GUIDE PHASE MODULATOR FOR INTEGRATED OPTOELECTRONICS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (19) : 1243 - 1245

[2] BALKANSKI M, 1965, AD619581

[3] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[4] GUTKIN AA, 1973, SOV PHYS SEMICOND+, V6, P1524

[5] GUTKIN AA, 1974, SOV PHYS SEMICOND+, V8, P781

[6] Moss T.S., 1973, SEMICONDUCTOR OPTO E

[7] REFRACTIVE INDICES OF GERMANIUM SILICON AND FUSED QUARTZ IN FAR INFRARED [J]. APPLIED OPTICS, 1967, 6 (11) : 1889 - +

[8] OPTICAL-ABSORPTION IN HEAVILY DOPED SILICON [J]. PHYSICAL REVIEW B, 1981, 23 (10) : 5531 - 5536

[9] COMPARISON OF CLASSICAL APPROXIMATIONS TO FREE CARRIER ABSORPTION IN SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (09) : 943 - &

[10] SCHUMANN PA, 1970, IBM TR221008 TECH RE