OPTICAL-ABSORPTION IN HEAVILY DOPED SILICON

被引：227

作者：

SCHMID, PE ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

PHYSICAL REVIEW B | 1981年 / 23卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.23.5531

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5531 / 5536

页数：6

共 26 条

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