SILICON-GERMANIUM ALLOYS AND HETEROSTRUCTURES - OPTICAL AND ELECTRONIC-PROPERTIES

被引：116

作者：

PEARSALL, TP

机构：

来源：

CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES | 1989年 / 15卷 / 06期

关键词：

D O I：

10.1080/10408438908243745

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：551 / &

共 106 条

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES
ABSTREITER, G
BRUGGER, H
WOLF, T
JORKE, H
HERZOG, HJ
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (22) : 2441 - 2444
[2] Abstreiter G., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V792, P77, DOI 10.1117/12.940823
[3] SILICON GERMANIUM STRAINED LAYER SUPERLATTICES
ABSTREITER, G
EBERL, K
FRIESS, E
WEGSCHEIDER, W
ZACHAI, R
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 431 - 438
[4] ABSTREITER G, 1986, 2 DIMENSIONAL SYSTEM, P130
[5] GESI ALLOYS - A STUDY OF SHORT-RANGE ORDER
AGRAWAL, BK
[J]. PHYSICAL REVIEW B, 1980, 22 (12): : 6294 - 6301
[6] EPITAXIAL-GROWTH OF SILICON-GERMANIUM SINGLE-CRYSTALS
AHARONI, H
BARLEV, A
BLECH, IA
MARGALIT, S
[J]. THIN SOLID FILMS, 1972, 11 (02) : 313 - &
[7] ANATASSAKIS G, 1970, SOLID STATE COMMUN, V8, P133
[8] Aspnes D. E., 1980, Handbook on semiconductors, vol.II. Optical properties of solids, P109
[9] SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION
BASTARD, G
[J]. PHYSICAL REVIEW B, 1981, 24 (10): : 5693 - 5697
[10] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
BEAN, JC
FELDMAN, LC
FIORY, AT
NAKAHARA, S
ROBINSON, IK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440