SILICON GERMANIUM STRAINED LAYER SUPERLATTICES

被引：105

作者：

ABSTREITER, G

EBERL, K

FRIESS, E

WEGSCHEIDER, W

ZACHAI, R

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90436-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：431 / 438

页数：8

共 40 条

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[7] NEW OPTICAL-TRANSITIONS IN SI-GE STRAINED SUPERLATTICES [J].

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[8]

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