LOW-LOSS OPTICAL RIDGE WAVE-GUIDES IN A STRAINED GESI EPITAXIAL LAYER GROWN ON SILICON

被引：25

作者：

SPLETT, A ^{[1
]}

SCHMIDTCHEN, J ^{[1
]}

SCHUPPERT, B ^{[1
]}

PETERMANN, K ^{[1
]}

KASPER, E ^{[1
]}

KIBBEL, H ^{[1
]}

机构：

[1] DAIMLER BENZ AG,FORSCHUNGSINST,W-7000 STUTTGART,GERMANY

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 14期

关键词：

Optical waveguides; Optoelectronics; Silicon;

D O I：

10.1049/el:19900671

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The realisation of single-mode ridge waveguides in a strained Si Ge epitaxial layer grown on silicon by MBE is reported. Measurements at A =1-3/mi yield a refractive index enhancement of 2-2 x 10 3 for x = 0 01 and waveguide losses around 3-5 dB/cm. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1035 / 1037

页数：3

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