GROWTH AND PROPERTIES OF SI/SIGE SUPERLATTICES

被引：86

作者：

KASPER, E

机构：

来源：

SURFACE SCIENCE | 1986年 / 174卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(86)90484-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：630 / 639

页数：10

共 29 条

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J].

ABSTREITER, G ;

BRUGGER, H ;

WOLF, T ;

JORKE, H ;

HERZOG, HJ .

PHYSICAL REVIEW LETTERS, 1985, 54 (22) :2441-2444

[2]

ABSTREITER G, 1986, SURFACE SCI, V172, P640

[3] PSEUDOMORPHIC GROWTH OF GEXSI1-X ON SILICON BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

SHENG, TT ;

FELDMAN, LC ;

FIORY, AT ;

LYNCH, RT .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :102-104

[4] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

FELDMAN, LC ;

FIORY, AT ;

NAKAHARA, S ;

ROBINSON, IK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :436-440

[5]

BEAN JC, 1985, 1ST P INT S SIL MOL, P385

[6]

BEAN JC, 1985, 1ST P INT S SI MOL B

[7]

EICHINGER P, 1985, 1ST P INT S SI MBE, P367

[8]

FIORY AT, J APPL PHYS

[9] NEW TYPE OF SOURCE GENERATING MISFIT DISLOCATIONS [J].

HAGEN, W ;

STRUNK, H .

APPLIED PHYSICS, 1978, 17 (01) :85-87

[10] X-RAY-INVESTIGATION OF BORON-DOPED AND GERMANIUM-DOPED SILICON EPITAXIAL LAYERS [J].

HERZOG, HJ ;

CSEPREGI, L ;

SEIDEL, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) :2969-2974

← 1 2 3 →