X-RAY-INVESTIGATION OF BORON-DOPED AND GERMANIUM-DOPED SILICON EPITAXIAL LAYERS

被引：73

作者：

HERZOG, HJ ^{[1
]}

CSEPREGI, L ^{[1
]}

SEIDEL, H ^{[1
]}

机构：

[1] FRAUNHOFER INST FESTKORPERTECHNOL,D-8000 MUNCHEN 60,FED REP GER

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 12期

关键词：

D O I：

10.1149/1.2115452

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2969 / 2974

页数：6

共 26 条

[1] X-RAY DOUBLE-CRYSTAL DIFFRACTOMETRY OF GA1-XALXAS EPITAXIAL LAYERS [J].

BARTELS, WJ ;

NIJMAN, W .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :518-525

[2]

BARTELT I, 1982, EL SOC EXT ABSTR, P454

[3]

BLACK IF, 1961, J APPL PHYS, V32, P192

[4] CALCULATION OF STRESS IN ELECTRODEPOSITS FROM THE CURVATURE OF A PLATED STRIP [J].

BRENNER, A ;

SENDEROFF, S .

JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1949, 42 (02) :105-123

[5]

Chu WK., 1978, BACKSCATTERING SPECT

[6] X-RAY MEASUREMENT OF ELASTIC STRAIN AND LATTICE CONSTANT OF DIFFUSED SILICON [J].

COHEN, BG .

SOLID-STATE ELECTRONICS, 1967, 10 (01) :33-&

[7] LATTICE PARAMETER + DENSITY IN GERMANIUM-SILICON ALLOYS [J].

DISMUKES, JP ;

PAFF, RJ ;

EKSTROM, L .

JOURNAL OF PHYSICAL CHEMISTRY, 1964, 68 (10) :3021-&

[8]

HALLIWELL MAG, 1981, I PHYS C SER, V60, P271

[9] DENSITOMETRIC AND ELECTRICAL INVESTIGATION OF BORON IN SILICON [J].

HORN, FH .

PHYSICAL REVIEW, 1955, 97 (06) :1521-1525

[10] X-RAY STUDY OF ALXGA1-XAS EPITAXIAL LAYERS [J].

ISHIDA, K ;

MATSUI, J ;

KAMEJIMA, T ;

SAKUMA, I .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 31 (01) :255-262

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