INVESTIGATION ON DEFECTS IN CZOCHRALSKI SILICON WITH HIGH-SENSITIVE LASER MICROWAVE PHOTOCONDUCTANCE TECHNIQUE

被引：6

作者：

KATAYAMA, K ^{[1
]}

AGARWAL, A ^{[1
]}

RADZIMSKI, ZJ ^{[1
]}

SHIMURA, F ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 1B期

关键词：

SILICON CRYSTALS; CRYSTAL DEFECTS; CARRIER RECOMBINATION CENTERS; CARRIER TRAP LEVELS; LASER MICROWAVE PHOTOCONDUCTANCE TECHNIQUE; DEEP-LEVEL TRANSIENT SPECTROSCOPY; NONCONTACT CHARACTERIZATION TECHNIQUE;

D O I：

10.1143/JJAP.32.298

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High sensitivity of a noncontact laser/microwave photoconductance (LM-PC) technique for defects in heat-treated Czochralski (CZ) silicon crystals was confirmed in comparison with other diagnostic techniques such as Fourier transform infrared spectroscopy (FT-IR) and deep-level transient spectroscopy (DLTS). The energy levels of recombination centers (E(T)) in samples subjected to a three-step intrinsic gettering (IG) thermal process were obtained with LM-PC although no significant oxygen reduction in the samples was observed with FT-IR. The defect density detection limits of LM-PC and DLTS for samples after the three-step IG process are estimated to be less-than-or-equal-to 1 X 10(7) cm-3 and approximately 1 x 10(10) cm-3, respectively. Moreover, the dependence of effective minority-carrier recombination lifetime on defect density was found to be influenced greatly by carbon concentration through the enhancement effect on oxygen precipitation.

引用

页码：298 / 302

页数：5

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