TRAP SPECTRUM OF THE NEW OXYGEN DONOR IN SILICON

被引：37

作者：

HOLZLEIN, K

PENSL, G

SCHULZ, M

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1984年 / 34卷 / 03期

关键词：

D O I：

10.1007/BF00616911

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：155 / 161

页数：7

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