THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON - NUCLEATION AND GROWTH-BEHAVIOR

被引：105

作者：

KISHINO, S ^{[1
]}

MATSUSHITA, Y ^{[1
]}

KANAMORI, M ^{[1
]}

IIZUKA, T ^{[1
]}

机构：

[1] VLSI TECHNOL RES ASSOC,COOP LABS,TAKATSU KU,KAWASAKI 213,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 01期

关键词：

D O I：

10.1143/JJAP.21.1

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1 / 12

页数：12

共 43 条

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