PRECIPITATION OF OXYGEN IN SILICON

被引：88

作者：

FREELAND, PE ^{[1
]}

JACKSON, KA ^{[1
]}

LOWE, CW ^{[1
]}

PATEL, JR ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 01期

关键词：

D O I：

10.1063/1.89200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：31 / 33

页数：3

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