CHARACTERIZATION OF STRUCTURAL DEFECTS IN ANNEALED SILICON CONTAINING OXYGEN

被引：137

作者：

MAHER, DM ^{[1
]}

STAUDINGER, A ^{[1
]}

PATEL, JR ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 09期

关键词：

D O I：

10.1063/1.323241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3813 / 3825

页数：13

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