THEORETICAL COMPARISON OF THE STABILITY CHARACTERISTICS OF CAPPED AND UNCAPPED GEXSI1-X STRAINED EPILAYERS

被引：26

作者：

JAIN, SC

GOSLING, TJ

WILLIS, JR

BULLOUGH, R

BALK, P

机构：

[1] UK AEA TECHNOL,HARWELL LAB,HARWELL OX11 0RA,OXON,ENGLAND

[2] UNIV BATH,SCH MATH SCI,BATH BA2 7AY,AVON,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1992年 / 35卷 / 08期

关键词：

D O I：

10.1016/0038-1101(92)90007-Y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A theoretical comparison of the stability characteristics of capped and uncapped GexSi1-x strained layers is performed, using exact expressions for the energy of orthogonal, periodic arrays of misfit dislocations in both cases. The critical thickness of a capped layer is predicted to be between two and four times larger than that of an uncapped layer which has the same lattice misfit with its substrate, Experimentally determined values of the critical layer thickness of capped layers are in good agreement with the theory presented. Equilibrium dislocation density and rate of plastic flow are predicted to be considerably reduced in a capped layer in comparison with an uncapped layer of the same thickness and misfit.

引用

页码：1073 / 1079

页数：7

共 20 条

[11] MISFIT DISLOCATION DYNAMICS IN SI1-XGEX/(100)SI - UNCAPPED ALLOY LAYERS, BURIED STRAINED LAYERS, AND MULTIPLE QUANTUM-WELLS
HOUGHTON, DC
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (14) : 1434 - 1436
[12] A REVIEW OF THEORETICAL AND EXPERIMENTAL WORK ON THE STRUCTURE OF GEXSI1-X STRAINED LAYERS AND SUPERLATTICES, WITH EXTENSIVE BIBLIOGRAPHY
JAIN, SC
WILLIS, JR
BULLOUGH, R
[J]. ADVANCES IN PHYSICS, 1990, 39 (02) : 127 - 190
[13] STRUCTURE, PROPERTIES AND APPLICATIONS OF GEXSI1-X STRAINED LAYERS AND SUPERLATTICES
JAIN, SC
HAYES, W
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (07) : 547 - 576
[14] JAIN SC, IN PRESS PHIL MAG A
[15] Kesan V. P., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P637, DOI 10.1109/IEDM.1990.237118
[16] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2
[17] NIX WD, 1990, 1990 MAT RES SOC SPR
[18] 75-GHZ FT SIGE-BASE HETEROJUNCTION BIPOLAR-TRANSISTORS
PATTON, GL
COMFORT, JH
MEYERSON, BS
CRABBE, EF
SCILLA, GJ
DEFRESART, E
STORK, JMC
SUN, JYC
HARAME, DL
BURGHARTZ, JN
[J]. IEEE ELECTRON DEVICE LETTERS, 1990, 11 (04) : 171 - 173
[19] THE ENERGY OF AN ARRAY OF DISLOCATIONS - IMPLICATIONS FOR STAIN RELAXATION IN SEMICONDUCTOR HETEROSTRUCTURES
WILLIS, JR
JAIN, SC
BULLOUGH, R
[J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1990, 62 (01): : 115 - 129
[20] THE ENERGY OF AN ARRAY OF DISLOCATIONS .2. CONSIDERATION OF A CAPPED EPITAXIAL LAYER
WILLIS, JR
JAIN, SC
BULLOUGH, R
[J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1991, 64 (03): : 629 - 640

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