ULTRAHIGH-SPEED ALGAAS/GAAS BALLISTIC COLLECTION TRANSISTORS USING CARBON AS P-TYPE DOPANT

被引：4

作者：

YAMAHATA, S

MATSUOKA, Y

ISHIBASHI, T

机构：

[1] NTT LSI Laboratories, Kanagawa, 243-01, 3-1 Morinosato Wakamiya, Atsugi-shi

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 22期

关键词：

HOT ELECTRON TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19931329

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultrahigh-speed performance is demonstrated in AlGaAs/GaAs ballistic collection transistors with a launcher (L-BCTs) grown by MOCVD using carbon (C)-doping of both a uniform base layer and a p+-layer for a potential cliff in the collector layer. A selfalignment fabrication technology characterised by a base-metal overlaid structure results in superior high-frequency performances of 100 and 144GHz for f(T) and f(max), respectively.

引用

页码：1996 / 1997

页数：2

共 8 条

[1] CARBON-DOPED BASE GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION USING CARBON-TETRACHLORIDE AS A DOPANT SOURCE [J].