HIGH-PERFORMANCE MOCVD-GROWN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH CARBON-DOPED BASE

被引：36

作者：

WANG, GW ^{[1
]}

PIERSON, RL ^{[1
]}

ASBECK, PM ^{[1
]}

WANG, KC ^{[1
]}

WANG, NL ^{[1
]}

NUBLING, R ^{[1
]}

CHANG, MF ^{[1
]}

SALERNO, J ^{[1
]}

SASTRY, S ^{[1
]}

机构：

[1] KOPIN CORP,TAUNTON,MA 02781

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 06期

关键词：

D O I：

10.1109/55.82083

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report excellent microwave performance demonstrated by metalorganic chemical vapor deposition (MOCVD) grown AlGaAs/GaAs HBT's with carbon-doped base. These devices achieve an f(t) of 76 GHz and an f(max) of 102 GHz. By varying device structures, current gain reaches over 300 in structures with a base doping of 2 x 10(19) cm-3. A static divide-by-4 divider implemented with C-doped base HBT's has been operated up to a frequency of 20.4 GHz. These results indicate the suitability of carbon doping for high-performance HBT's.

引用

页码：347 / 349

页数：3

共 8 条

[1] CARBON DOPING OF III-V-COMPOUNDS GROWN BY MOMBE [J].