CARBON DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS FROM A HEATED GRAPHITE FILAMENT

被引：125

作者：

MALIK, RJ

NOTTENBERG, RN

SCHUBERT, EF

WALKER, JF

RYAN, RW

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 26期

关键词：

D O I：

10.1063/1.100187

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：2661 / 2663

页数：3

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