CARBON-DOPED ALXGA1-XAS-GAAS QUANTUM WELL LASERS

被引：42

作者：

GUIDO, LJ ^{[1
]}

JACKSON, GS ^{[1
]}

HALL, DC ^{[1
]}

PLANO, WE ^{[1
]}

HOLONYAK, N ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

关键词：

D O I：

10.1063/1.99403

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：522 / 524

页数：3

共 14 条

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[2] LOW-THRESHOLD DISORDER-DEFINED BURIED-HETEROSTRUCTURE ALXGA1-XAS-GAAS QUANTUM WELL LASERS
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BURNHAM, RD
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (12) : 4515 - 4520
[3] DEPPE DG, 1987, APPL PHYS LETT, V50, P631
[4] DUPUIS RD, 1979, 7TH P INT S GAAS REL, P1
[5] GUIDO LJ, 1987, APPL PHYS LETT, V50, P759
[6] STRIPE-GEOMETRY ALXGA1-XAS-GAAS QUANTUM-WELL LASERS VIA HYDROGENATION
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[J]. APPLIED PHYSICS LETTERS, 1987, 51 (20) : 1629 - 1631
[7] EFFECTS OF BE AND SI ON DISORDERING OF THE ALAS/GAAS SUPERLATTICE
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[J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 849 - 850
[8] PROPERTIES OF HIGH-PURITY ALXGA1-XAS GROWN BY THE METAL-ORGANIC VAPOR-PHASE-EPITAXY TECHNIQUE USING METHYL PRECURSORS
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DELINE, V
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BRADLEY, J
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) : 632 - 643
[9] MECHANISM OF CARBON INCORPORATION IN MOCVD GAAS
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[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 148 - 156
[10] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159