PROPERTIES OF HIGH-PURITY ALXGA1-XAS GROWN BY THE METAL-ORGANIC VAPOR-PHASE-EPITAXY TECHNIQUE USING METHYL PRECURSORS

被引：130

作者：

KUECH, TF

WOLFORD, DJ

VEUHOFF, E

DELINE, V

MOONEY, PM

POTEMSKI, R

BRADLEY, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 02期

关键词：

D O I：

10.1063/1.339792

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：632 / 643

页数：12

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