LOW-THRESHOLD DISORDER-DEFINED BURIED-HETEROSTRUCTURE ALXGA1-XAS-GAAS QUANTUM WELL LASERS

被引：56

作者：

DEPPE, DG

HSIEH, KC

HOLONYAK, N

BURNHAM, RD

THORNTON, RL

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 12期

关键词：

D O I：

10.1063/1.336265

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4515 / 4520

页数：6

共 14 条

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APPLIED PHYSICS LETTERS, 1982, 41 (03) :228-230

[2]

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[3] DISORDER OF AN ALAS-GAAS SUPER-LATTICE BY SILICON IMPLANTATION [J].

COLEMAN, JJ ;

DAPKUS, PD ;

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CAMRAS, MD ;

HOLONYAK, N .

APPLIED PHYSICS LETTERS, 1982, 40 (10) :904-906

[4]

DUPUIS RD, 1979, 7TH P INT S GAAS REL, P1

[5] GAALAS BURIED MULTIQUANTUM WELL LASERS FABRICATED BY DIFFUSION-INDUCED DISORDERING [J].

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SEMURA, S ;

SAITO, H ;

OHTA, T ;

UCHIDA, Y ;

NAKASHIMA, H .

APPLIED PHYSICS LETTERS, 1984, 45 (01) :1-3

[6] IMPURITY-DISORDERED, COUPLED-STRIPE ALXGA1-XAS-GAAS QUANTUM WELL LASER [J].

GAVRILOVIC, P ;

MEEHAN, K ;

EPLER, JE ;

HOLONYAK, N ;

BURNHAM, RD ;

THORNTON, RL ;

STREIFER, W .

APPLIED PHYSICS LETTERS, 1985, 46 (09) :857-859

[7] IR-RED GAAS-ALAS SUPER-LATTICE LASER MONOLITHICALLY INTEGRATED IN A YELLOW-GAP CAVITY [J].

HOLONYAK, N ;

LAIDIG, WD ;

CAMRAS, MD ;

COLEMAN, JJ ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1981, 39 (01) :102-104

[8]

HOLONYAK N, 1985, SYNTHETIC MODULATED, P257

[9]

HOLONYAK N, 1983, Patent No. 4378255

[10]

LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

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