STRIPE-GEOMETRY ALXGA1-XAS-GAAS QUANTUM-WELL LASERS VIA HYDROGENATION

被引：29

作者：

JACKSON, GS

PAN, N

FENG, MS

STILLMAN, GE

HOLONYAK, N

BURNHAM, RD

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 20期

关键词：

D O I：

10.1063/1.98577

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1629 / 1631

页数：3

共 13 条

[1]

Casey jr H. C., 1978, HETEROSTRUCTURE LA B, P9

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[3] LOW-THRESHOLD DISORDER-DEFINED BURIED-HETEROSTRUCTURE ALXGA1-XAS-GAAS QUANTUM WELL LASERS [J].

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[4]

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[8] PASSIVATION OF SI DONORS AND DX CENTERS IN ALGAAS BY HYDROGEN PLASMA EXPOSURE [J].

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APPLIED PHYSICS LETTERS, 1987, 50 (14) :921-923

[9] SI DONOR NEUTRALIZATION IN HIGH-PURITY GAAS [J].

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APPLIED PHYSICS LETTERS, 1987, 50 (25) :1832-1834

[10] HYDROGEN PASSIVATION OF C ACCEPTORS IN HIGH-PURITY GAAS [J].

PAN, N ;

BOSE, SS ;

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ITO, CR ;

FENG, M .

APPLIED PHYSICS LETTERS, 1987, 51 (08) :596-598

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