SI DONOR NEUTRALIZATION IN HIGH-PURITY GAAS

被引：34

作者：

PAN, N

LEE, B

BOSE, SS

KIM, MH

HUGHES, JS

STILLMAN, GE

ARAI, K

NASHIMOTO, Y

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] NEC CORP,DIV COMPOUND SEMICOND DEVICE,DEPT BASIC ENGN,KANAGAWA 211,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 25期

关键词：

D O I：

10.1063/1.97712

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1832 / 1834

页数：3

共 10 条

[1] DONOR NEUTRALIZATION IN GAAS(SI) BY ATOMIC-HYDROGEN [J].

CHEVALLIER, J ;

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TU, CW ;

PEARTON, SJ .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :108-110

[2] MODIFICATION OF SURFACE CHARACTERISTICS IN GAAS WITH DRY PROCESSING [J].

CHUNG, Y ;

LANGER, DW ;

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LOOK, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (01) :40-44

[3] PASSIVATION OF DEEP LEVEL DEFECTS IN MOLECULAR-BEAM EPITAXIAL GAAS BY HYDROGEN PLASMA EXPOSURE [J].

DAUTREMONTSMITH, WC ;

NABITY, JC ;

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STAVOLA, M ;

CHEVALLIER, J ;

TU, CW ;

PEARTON, SJ .

APPLIED PHYSICS LETTERS, 1986, 49 (17) :1098-1100

[4] LUMINESCENCE AND EXCITATION-SPECTRA OF EXCITON EMISSION IN GAAS [J].

HEIM, U ;

HIESINGE.P .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 66 (02) :461-470

[5] ELECTRON-MOBILITY STUDIES OF THE DONOR NEUTRALIZATION BY ATOMIC-HYDROGEN IN GAAS DOPED WITH SILICON [J].

JALIL, A ;

CHEVALLIER, J ;

AZOULAY, R ;

MIRCEA, A .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (11) :3774-3777

[6]

Lee B -L., UNPUB

[7] HYDROGENATION OF SHALLOW-DONOR LEVELS IN GAAS [J].

PEARTON, SJ ;

DAUTREMONTSMITH, WC ;

CHEVALLIER, J ;

TU, CW ;

CUMMINGS, KD .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) :2821-2827

[8] CHARACTERIZATION OF HIGH-PURITY SI-DOPED MOLECULAR-BEAM EPITAXIAL GAAS [J].

SKROMME, BJ ;

BOSE, SS ;

LOW, TS ;

LEPKOWSKI, TR ;

DEJULE, RY ;

STILLMAN, GE ;

HWANG, JCM .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (12) :4685-4702

[9]

STILLMAN GE, 1977, SEMICONDUCT SEMIMET, V12, P169

[10] PHOTOLUMINESCENCE STUDY OF THE SHALLOW DONOR NEUTRALIZATION IN GAAS(SI) BY ATOMIC-HYDROGEN [J].

WEBER, J ;

PEARTON, SJ ;

DAUTREMONTSMITH, WC .

APPLIED PHYSICS LETTERS, 1986, 49 (18) :1181-1183

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