ELECTRON-MOBILITY STUDIES OF THE DONOR NEUTRALIZATION BY ATOMIC-HYDROGEN IN GAAS DOPED WITH SILICON

被引：57

作者：

JALIL, A ^{[1
]}

CHEVALLIER, J ^{[1
]}

AZOULAY, R ^{[1
]}

MIRCEA, A ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 11期

关键词：

D O I：

10.1063/1.336764

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3774 / 3777

页数：4

共 14 条

[1] MOCVD N-TYPE DOPING OF GAAS AND GAALAS USING SILICON AND SELENIUM AND FABRICATION OF DOUBLE HETEROSTRUCTURE BIPOLAR-TRANSISTOR
AZOULAY, R
DUGRAND, L
ANKRI, D
RAO, EVK
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 453 - 460
[2] Brooks H., 1955, ADV ELECTRONICS ELEC, P158
[3] DONOR NEUTRALIZATION IN GAAS(SI) BY ATOMIC-HYDROGEN
CHEVALLIER, J
DAUTREMONTSMITH, WC
TU, CW
PEARTON, SJ
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 108 - 110
[4] CHEVALLIER J, 1985, 3RD P INT S DRY ET S, V229, P161
[5] MODIFICATION OF SURFACE CHARACTERISTICS IN GAAS WITH DRY PROCESSING
CHUNG, Y
LANGER, DW
BECKER, R
LOOK, D
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (01) : 40 - 44
[6] DEUTERIUM PASSIVATION OF GRAIN-BOUNDARY DANGLING BONDS IN SILICON THIN-FILMS
JOHNSON, NM
BIEGELSEN, DK
MOYER, MD
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 882 - 884
[7] DEUTERIUM AT THE SI-SIO2 INTERFACE DETECTED BY SECONDARY-ION MASS-SPECTROMETRY
JOHNSON, NM
BIEGELSEN, DK
MOYER, MD
DELINE, VR
EVANS, CA
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 995 - 997
[8] PASSIVATION OF THE DOMINANT DEEP LEVEL (EL2) IN GAAS BY HYDROGEN
LAGOWSKI, J
KAMINSKA, M
PARSEY, JM
GATOS, HC
LICHTENSTEIGER, M
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1078 - 1080
[9] NEUTRALIZATION OF SHALLOW ACCEPTOR LEVELS IN SILICON BY ATOMIC-HYDROGEN
PANKOVE, JI
CARLSON, DE
BERKEYHEISER, JE
WANCE, RO
[J]. PHYSICAL REVIEW LETTERS, 1983, 51 (24) : 2224 - 2225
[10] HYDROGEN LOCALIZATION NEAR BORON IN SILICON
PANKOVE, JI
ZANZUCCHI, PJ
MAGEE, CW
LUCOVSKY, G
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (04) : 421 - 423

← 1 2 →