MOCVD N-TYPE DOPING OF GAAS AND GAALAS USING SILICON AND SELENIUM AND FABRICATION OF DOUBLE HETEROSTRUCTURE BIPOLAR-TRANSISTOR

被引：24

作者：

AZOULAY, R

DUGRAND, L

ANKRI, D

RAO, EVK

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 68卷 / 01期

关键词：

D O I：

10.1016/0022-0248(84)90449-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

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页码：453 / 460

页数：8

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