ELECTRICAL AND OPTICAL-PROPERTIES OF N-TYPE ALXGA1-XAS GROWN BY MO-VPE

[1] ANDRE JP, 1977, I PHYS C SER A, V33, P1

[2] ANDRE JP, 1980, SEP P INT S GAAS REL

[3] BARTELS WJ, 1979, I PHYS C SER, V45, P229

[4] THE USE OF GAAS-(GA, AL)AS HETEROSTRUCTURES FOR FET DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1141 - 1147

[5] BOISSY MC, DGRST7770952 CONTR

[6] CASEY HC, 1978, HETEROSTRUCTURE LA A, P193

[7] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 466 - 468

[8] GA(1-X)ALXAS-GA(1-Y)ALYAS DOUBLE-HETEROSTRUCTURE ROOM TEMPERATURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (12) : 839 - 841

[9] Fabre E., 1977, Proceedings of the International Conference on Photovoltaic Solar Energy, P388

[10] HALLAIS J, 1979, FAL M EL SOC EXT ABS, V79, P1446

[1] ANDRE JP, 1977, I PHYS C SER A, V33, P1

[2] ANDRE JP, 1980, SEP P INT S GAAS REL

[3] BARTELS WJ, 1979, I PHYS C SER, V45, P229

[4] THE USE OF GAAS-(GA, AL)AS HETEROSTRUCTURES FOR FET DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1141 - 1147

[5] BOISSY MC, DGRST7770952 CONTR

[6] CASEY HC, 1978, HETEROSTRUCTURE LA A, P193

[7] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 466 - 468

[8] GA(1-X)ALXAS-GA(1-Y)ALYAS DOUBLE-HETEROSTRUCTURE ROOM TEMPERATURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (12) : 839 - 841

[9] Fabre E., 1977, Proceedings of the International Conference on Photovoltaic Solar Energy, P388

[10] HALLAIS J, 1979, FAL M EL SOC EXT ABS, V79, P1446