CHARACTERIZATION OF HIGH-PURITY SI-DOPED MOLECULAR-BEAM EPITAXIAL GAAS

被引：89

作者：

SKROMME, BJ

BOSE, SS

LOW, TS

LEPKOWSKI, TR

DEJULE, RY

STILLMAN, GE

HWANG, JCM

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[3] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 12期

关键词：

D O I：

10.1063/1.336243

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4685 / 4702

页数：18

共 72 条

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[9] IMPURITY AND DEFECT LEVELS IN BERYLLIUM-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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