CHARACTERIZATION OF HIGH-PURITY SI-DOPED MOLECULAR-BEAM EPITAXIAL GAAS

被引：89

作者：

SKROMME, BJ

BOSE, SS

LOW, TS

LEPKOWSKI, TR

DEJULE, RY

STILLMAN, GE

HWANG, JCM

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[3] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 12期

关键词：

D O I：

10.1063/1.336243

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4685 / 4702

页数：18

共 72 条

[11] LOW-TEMPERATURE PHOTO-LUMINESCENCE OF LIGHTLY SI-DOPED AND UNDOPED MBE GAAS [J].

BRIONES, F ;

COLLINS, DM .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) :847-866

[12] TRANSIENT CAPACITANCE MEASUREMENTS ON RESISTIVE SAMPLES [J].

BRONIATOWSKI, A ;

BLOSSE, A ;

SRIVASTAVA, PC ;

BOURGOIN, JC .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :2907-2910

[13] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J].

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1981, 38 (09) :701-703

[14] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J].

CHAI, YG ;

WOOD, CEC ;

CHOW, R .

APPLIED PHYSICS LETTERS, 1981, 39 (10) :800-803

[15] IDENTIFICATION OF THE TELLURIUM DONOR AT THE RESIDUAL LEVEL IN GAAS [J].

COLTER, PC ;

REYNOLDS, DC ;

LITTON, CW ;

SMITH, EB .

SOLID STATE COMMUNICATIONS, 1983, 45 (04) :375-377

[16] AN OPTICAL CHARACTERIZATION OF DEFECT LEVELS INDUCED BY MBE GROWTH OF GAAS [J].

CONTOUR, JP ;

NEU, G ;

LEROUX, M ;

CHAIX, C ;

LEVESQUE, B ;

ETIENNE, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :811-815

[17] CHARACTERIZATION OF DONORS IN GAAS EPITAXIAL-FILMS BY FAR-INFRARED PHOTOCONDUCTIVE TECHNIQUES [J].

COOKE, RA ;

HOULT, RA ;

KIRKMAN, RF ;

STRADLING, RA .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (06) :945-953

[18]

Dean P. J., 1973, PROGR SOLID STATE CH, V8, P1

[19] MEASUREMENTS OF DEEP LEVELS IN HIGH-PURITY MOLECULAR-BEAM EPITAXIAL GAAS [J].

DEJULE, RY ;

HAASE, MA ;

STILLMAN, GE ;

PALMATEER, SC ;

HWANG, JCM .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5287-5289

[20] CONSTANT CAPACITANCE DLTS CIRCUIT FOR MEASURING HIGH-PURITY SEMICONDUCTORS [J].

DEJULE, RY ;

HAASE, MA ;

RUBY, DS ;

STILLMAN, GE .

SOLID-STATE ELECTRONICS, 1985, 28 (06) :639-641

← 1 2 3 4 5 6 7 8 →