OBSERVATION OF SHALLOW RESIDUAL DONORS IN HIGH-PURITY EPITAXIAL GAAS BY MEANS OF PHOTO-LUMINESCENCE SPECTROSCOPY

被引：30

作者：

ALMASSY, RJ ^{[1
]}

REYNOLDS, DC ^{[1
]}

LITTON, CW ^{[1
]}

BAJAJ, KK ^{[1
]}

MCCOY, GL ^{[1
]}

机构：

[1] USAF,WRIGHT AERONAUT LABS,AVION LAB,WRIGHT PATTERSON AFB,OH 45433

来源：

关键词：

D O I：

10.1016/0038-1098(81)90016-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1053 / 1056

页数：4

共 8 条

[1] RELIABLE FAR-INFRARED PHOTOCONDUCTIVITY METHOD TO IDENTIFY A VARIETY OF RESIDUAL DONORS IN EPITAXIAL GAAS
AFSAR, MN
BUTTON, KJ
MCCOY, GL
[J]. INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1980, 1 (01): : 145 - 158
[2] CHARACTERIZATION OF DONORS IN GAAS EPITAXIAL-FILMS BY FAR-INFRARED PHOTOCONDUCTIVE TECHNIQUES
COOKE, RA
HOULT, RA
KIRKMAN, RF
STRADLING, RA
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (06) : 945 - 953
[3] RESIDUAL DONORS IN HIGH-PURITY GALLIUM-ARSENIDE EPITAXIALLY GROWN FROM VAPOR-PHASE
OZEKI, M
KITAHARA, K
NAKAI, K
SHIBATOMI, A
DAZAI, K
OKAWA, S
RYUZAN, O
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (09) : 1617 - 1622
[4] RUHLE W, 1978, PHYS REV B, V12, P7011
[5] STILLMAN GE, 1971, SOLID STATE COMMUN, V9, P245
[6] STRADLING RA, 1972, GALLIUM ARSENIDE 17, P65
[7] SILICON AS A RESIDUAL DONOR IN HIGH-PURITY GAAS
WOLFE, CM
KORN, DM
STILLMAN, GE
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (02) : 78 - 80
[8] WOLFE CM, 1977, GALLIUM ARSENIDE REL, P120